Demonstration of p-type In0.7Ga0.3As/GaAs0.35Sb0.65 and n-type GaAs0.4Sb0.6/In0.65Ga0.35As Complimentary Heterojunction Vertical Tunnel FETs for Ultra-Low Power Logic
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Flicker Noise Characterization and Modeling of Homo and Hetero-Junction III-V Tunnel FETs
Introduction:GaAsySb1-y/In0xGa1-xAs based III-V staggered hetero-junction Tunnel Field Effect Transistors were demonstrated with MOSFET-like high drive currents at low Vds [1], demonstrating feasibility of TFETs to scale supply voltage for future low power logic applications. More than 2x enhancement in Ion was demonstrated over the In0.7Ga0.3As homo-junction counterpart due to reduction in the...
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